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NXP Semiconductors
PESD5V0U5BF; PESD5V0U5BV
Ultra low capacitance bidirectional ?vefold ESD protection arrays
7. Application information
The PESD5V0U5BF and the PESD5V0U5BV are designed for the protection of up to ?ve
bidirectional data or signal lines from the damage caused by ESD and surge pulses. The
devices may be used on lines where the signal polarities are both, positive and negative
with respect to ground.
data- or transmission lines
DUT
1
2
3
6
5
4
006aab347
Fig 5.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test quali?cation for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0U5BF_PESD5V0U5BV_1
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
7 of 12
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相关代理商/技术参数
PESD5V0V1BA 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Clamping Voltage
PESD5V0V1BA,115 功能描述:ESD 抑制器 DIODE BI ESD PROTECT RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
PESD5V0V1BB 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD523 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD523 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD523, Diode Type:ESD Protection, Clamping Voltage
PESD5V0V1BB,115 功能描述:ESD 抑制器 DIODE BI ESD PROTECT RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
PESD5V0V1BCSF,315 功能描述:DIODE ESD ULT LOW PRO BID SOD962 RoHS:是 类别:未定义的类别 >> 其它 系列:* 标准包装:1 系列:* 其它名称:MS305720A
PESD5V0V1BCSF315 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
PESD5V0V1BDSF,315 功能描述:DIODE ESD ULT LOW PRO BID SOD962 RoHS:是 类别:未定义的类别 >> 其它 系列:* 标准包装:1 系列:* 其它名称:MS305720A
PESD5V0V1BDSF315 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: